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Low-frequency noise study of n-MOSFETs with HfO2 gate dielectric

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorPantisano, Luigi
dc.contributor.authorClaeys, Cor
dc.contributor.authorYoung, Edward
dc.date.accessioned2021-10-15T06:42:06Z
dc.date.available2021-10-15T06:42:06Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8151
dc.sourceIIOimport
dc.titleLow-frequency noise study of n-MOSFETs with HfO2 gate dielectric
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.conference204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesAbstract 574


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