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Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V.
dc.contributor.authorKraitchinski, A.
dc.contributor.authorKras'ko, M.
dc.contributor.authorTischenko, V.
dc.contributor.authorVoitovych, V.
dc.contributor.authorVersluys, J.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-15T06:42:52Z
dc.date.available2021-10-15T06:42:52Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8154
dc.sourceIIOimport
dc.titleDeep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage7184
dc.source.endpage7188
dc.source.journalJapanese Journal of Applied Physics. Part 1: Regular Papers
dc.source.issue3
dc.source.volume42
imec.availabilityPublished - imec


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