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dc.contributor.authorTakakura, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorYoshida, T.
dc.contributor.authorMurakawa, H.
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorJob, R.
dc.contributor.authorUlyashin, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T06:55:33Z
dc.date.available2021-10-15T06:55:33Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8203
dc.sourceIIOimport
dc.titleComparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1022
dc.source.endpage1025
dc.source.journalPhysica B
dc.source.volume340-342
imec.availabilityPublished - imec
imec.internalnotes22nd International Conference on Defects in Semiconductors; July 2003; Aarhus, Denmark


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