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Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

dc.contributor.authorTsai, Wilman
dc.contributor.authorCarter, Richard
dc.contributor.authorNohira, Hiroshi
dc.contributor.authorCaymax, Matty
dc.contributor.authorConard, Thierry
dc.contributor.authorCosnier, Vincent
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorPetry, Jasmine
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorYoung, Edward
dc.contributor.authorZhao, Chao
dc.contributor.authorMaes, Jan
dc.contributor.authorTuominen, M.
dc.contributor.authorSchulte, W.H.
dc.contributor.authorGarfunkel, E.
dc.contributor.authorGustafsson, T.
dc.date.accessioned2021-10-15T07:01:59Z
dc.date.available2021-10-15T07:01:59Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8228
dc.sourceIIOimport
dc.titleSurface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMaes, Jan
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage259
dc.source.endpage272
dc.source.journalMicroelectronic Engineering
dc.source.issue3
dc.source.volume65
imec.availabilityPublished - imec


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