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On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

dc.contributor.authorWestlinder, J.
dc.contributor.authorSchram, Tom
dc.contributor.authorPantisano, Luigi
dc.contributor.authorCartier, Eduard
dc.contributor.authorKerber, Andreas
dc.contributor.authorLujan, Guilherme
dc.contributor.authorOlsson, J.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T07:47:31Z
dc.date.available2021-10-15T07:47:31Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8398
dc.sourceIIOimport
dc.titleOn the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage550
dc.source.endpage552
dc.source.journalIEEE Electron Device Letters
dc.source.issue9
dc.source.volume24
imec.availabilityPublished - imec


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