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Effects of detrapping on electron traps generated in gate oxides

dc.contributor.authorZhang, W.D.
dc.contributor.authorZhang, J.F.
dc.contributor.authorLalor, M.J.
dc.contributor.authorBurton, D.R.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.date.accessioned2021-10-15T07:57:56Z
dc.date.available2021-10-15T07:57:56Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8435
dc.sourceIIOimport
dc.titleEffects of detrapping on electron traps generated in gate oxides
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage174
dc.source.endpage182
dc.source.journalSemiconductor Science and Technology
dc.source.issue2
dc.source.volume18
imec.availabilityPublished - open access


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