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Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications

dc.contributor.authorAckaert, Jan
dc.contributor.authorLowe, Antony
dc.contributor.authorBoonen, Sylvie
dc.contributor.authorYao, Thierry
dc.contributor.authorRayhem, Joseph
dc.contributor.authorDesoete, Bart
dc.contributor.authorPrasad, Jagdish
dc.contributor.authorThomason, Mike
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorHendrickx, Paul
dc.date.accessioned2021-10-15T12:38:40Z
dc.date.available2021-10-15T12:38:40Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8462
dc.sourceIIOimport
dc.titleCharacterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications
dc.typeJournal article
dc.contributor.imecauthorAckaert, Jan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage1911
dc.source.endpage1915
dc.source.journalSolid-State Electronics
dc.source.issue10_11
dc.source.volume48
imec.availabilityPublished - imec
imec.internalnotesPaper from the Int. Semiconductor Device Research Symposium 2003


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