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Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

dc.contributor.authorBoeykens, Steven
dc.contributor.authorLeys, Maarten
dc.contributor.authorGermain, Marianne
dc.contributor.authorBelmans, Ronnie
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-15T12:44:48Z
dc.date.available2021-10-15T12:44:48Z
dc.date.issued2004-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8599
dc.sourceIIOimport
dc.titleInfluence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC
dc.typeJournal article
dc.contributor.imecauthorBelmans, Ronnie
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage312
dc.source.endpage317
dc.source.journalJournal of Crystal Growth
dc.source.issue1_4
dc.source.volume272
imec.availabilityPublished - imec
imec.internalnotes12th Int. Conf. Metalorganic Vapor Phase Epitaxy; June 2004; Lahina, HI, USA


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