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Tensely strained silicon on SiGe produced by strain transfer

dc.contributor.authorBuca, D.
dc.contributor.authorHolländer, B.
dc.contributor.authorTrinkaus, H.
dc.contributor.authorMantl, S.
dc.contributor.authorCarius, R.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorSchaefer, H.
dc.date.accessioned2021-10-15T12:48:36Z
dc.date.available2021-10-15T12:48:36Z
dc.date.issued2004-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8646
dc.sourceIIOimport
dc.titleTensely strained silicon on SiGe produced by strain transfer
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage2499
dc.source.endpage2501
dc.source.journalApplied Physics Letters
dc.source.issue13
dc.source.volume85
imec.availabilityPublished - imec


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