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Direct observation by resonant tunneling of the B+ level in a delta-doped silicon barrier

dc.contributor.authorCaro, J.
dc.contributor.authorVink, I.D.
dc.contributor.authorSmit, G.D.J.
dc.contributor.authorRogge, S.
dc.contributor.authorKlapwijk, T.M.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-15T12:49:41Z
dc.date.available2021-10-15T12:49:41Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8658
dc.sourceIIOimport
dc.titleDirect observation by resonant tunneling of the B+ level in a delta-doped silicon barrier
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage125324-1
dc.source.endpage125324-5
dc.source.journalPhysical Review B
dc.source.issue12
dc.source.volume69
imec.availabilityPublished - imec


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