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Depletion type floating gate p-channel MOS transistor for recording action potentials generated by cultured neurons

dc.contributor.authorCohen, A.
dc.contributor.authorSpira, M.E.
dc.contributor.authorYitshaik, S.
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorShwartzglass, O.
dc.contributor.authorShappir, J.
dc.date.accessioned2021-10-15T12:54:38Z
dc.date.available2021-10-15T12:54:38Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8704
dc.sourceIIOimport
dc.titleDepletion type floating gate p-channel MOS transistor for recording action potentials generated by cultured neurons
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage1703
dc.source.endpage1709
dc.source.journalBiosensors and Bioelectronics
dc.source.issue12
dc.source.volume19
imec.availabilityPublished - imec


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