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A functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node

dc.contributor.authorCollaert, Nadine
dc.contributor.authorDixit, Abhisek
dc.contributor.authorGoodwin, Michael
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorRooyackers, Rita
dc.contributor.authorDegroote, Bart
dc.contributor.authorLeunissen, Peter
dc.contributor.authorVeloso, Anabela
dc.contributor.authorJonckheere, Rik
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-15T12:54:54Z
dc.date.available2021-10-15T12:54:54Z
dc.date.issued2004-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8706
dc.sourceIIOimport
dc.titleA functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.source.peerreviewno
dc.source.beginpage568
dc.source.endpage570
dc.source.journalIEEE Electron Device Letters
dc.source.issue8
dc.source.volume25
imec.availabilityPublished - imec


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