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Erratum : "Substrate bias effect on the capture kinetics of random telegraph signals in submicron p-channel silicon metal-oxide-semiconductor transistors" [Appl. Phys. Lett. 66, 598 (1995)]

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-09-29T13:16:33Z
dc.date.available2021-09-29T13:16:33Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/871
dc.sourceIIOimport
dc.titleErratum : "Substrate bias effect on the capture kinetics of random telegraph signals in submicron p-channel silicon metal-oxide-semiconductor transistors" [Appl. Phys. Lett. 66, 598 (1995)]
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage2914
dc.source.journalAppl. Phys. Lett.
dc.source.volume66
imec.availabilityPublished - imec


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