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Substrate bias effect on the capture kinetics of random telegraph signals in submicron p -channel silicon Metal-Oxide-Semiconductor Transistors

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-09-29T13:16:39Z
dc.date.available2021-09-29T13:16:39Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/876
dc.sourceIIOimport
dc.titleSubstrate bias effect on the capture kinetics of random telegraph signals in submicron p -channel silicon Metal-Oxide-Semiconductor Transistors
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage598
dc.source.endpage600
dc.source.journalAppl. Phys. Lett.
dc.source.issue5
dc.source.volume66
imec.availabilityPublished - imec


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