Show simple item record

D.C. and low frequency noise characteristics of g-irradiated gate-all-around silicon-on-insulator MOS transistors

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorCoenen, S.
dc.contributor.authorDecreton, M.
dc.date.accessioned2021-09-29T13:16:47Z
dc.date.available2021-09-29T13:16:47Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/881
dc.sourceIIOimport
dc.titleD.C. and low frequency noise characteristics of g-irradiated gate-all-around silicon-on-insulator MOS transistors
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1
dc.source.endpage8
dc.source.journalSolid State Electronics
dc.source.issue1
dc.source.volume38
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
856.pdf
Size:
422.3Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record