Show simple item record

Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer

dc.contributor.authorDelhougne, Romain
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T13:12:17Z
dc.date.available2021-10-15T13:12:17Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8831
dc.sourceIIOimport
dc.titleDevelopment of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
dc.typeJournal article
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage91
dc.source.endpage94
dc.source.journalApplied Surface Science
dc.source.issue1_4
dc.source.volume224
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record