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Static and low-frequency noise characteristics of n+p junction diodes fabricated in different silicon substrates

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorRotondaro, Antonio
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-09-29T13:16:51Z
dc.date.available2021-09-29T13:16:51Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/884
dc.sourceIIOimport
dc.titleStatic and low-frequency noise characteristics of n+p junction diodes fabricated in different silicon substrates
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1002
dc.source.endpage8
dc.source.journalSemiconductor Science and Technology
dc.source.issue7
dc.source.volume10
imec.availabilityPublished - imec


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