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Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

dc.contributor.authorFobelets, Kristel
dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorPapavasilliou, C.
dc.contributor.authorVilches, T.
dc.contributor.authorGaspari, V.
dc.contributor.authorVelazquez-Perez, J.E.
dc.contributor.authorMichelakis, K.
dc.contributor.authorHackbarth, T.
dc.contributor.authorKönig, U.
dc.date.accessioned2021-10-15T13:25:08Z
dc.date.available2021-10-15T13:25:08Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8907
dc.sourceIIOimport
dc.titleComparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage1401
dc.source.endpage1406
dc.source.journalSolid-State Electronics
dc.source.issue8
dc.source.volume48
imec.availabilityPublished - imec


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