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An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers

dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorBlomme, Pieter
dc.contributor.authorHenson, Kirklen
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-15T13:38:43Z
dc.date.available2021-10-15T13:38:43Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8978
dc.sourceIIOimport
dc.titleAn effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers
dc.typeJournal article
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage617
dc.source.endpage625
dc.source.journalSolid-State Electronics
dc.source.issue4
dc.source.volume48
imec.availabilityPublished - imec


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