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On the calculation of the quasi-bound-states energies and lifetimes in inverted MOS structures with ultrathin oxides and its application to the direct tunneling current

dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorMagnus, Wim
dc.contributor.authorSchoenmaker, Wim
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-15T13:38:54Z
dc.date.available2021-10-15T13:38:54Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8979
dc.sourceIIOimport
dc.titleOn the calculation of the quasi-bound-states energies and lifetimes in inverted MOS structures with ultrathin oxides and its application to the direct tunneling current
dc.typeJournal article
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage764
dc.source.endpage773
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue5
dc.source.volume51
imec.availabilityPublished - imec


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