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Degradation of the electrical performance and floating body efffects in ultra thin gate oxide FD-SOI nMOSFETs by 2-MeV electron irradiation

dc.contributor.authorHayama, K.
dc.contributor.authorRafi, J.M.
dc.contributor.authorTakakura, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorKuboyama, S.
dc.contributor.authorOka, K.
dc.contributor.authorMatsuda, S.
dc.date.accessioned2021-10-15T13:43:54Z
dc.date.available2021-10-15T13:43:54Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9004
dc.sourceIIOimport
dc.titleDegradation of the electrical performance and floating body efffects in ultra thin gate oxide FD-SOI nMOSFETs by 2-MeV electron irradiation
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage43
dc.source.endpage48
dc.source.conferenceProceedings 5th European Workshop on Radiation Effects on Components and Systems (RADECS)
dc.source.conferencedate22/09/2004
dc.source.conferencelocationMadrid Spain
imec.availabilityPublished - imec


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