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Strain relaxation of pseudomorphic Si1-xGe/Si(100) heterostructures after Si+ ion implantation

dc.contributor.authorHolländer, B.
dc.contributor.authorBuca, D.
dc.contributor.authorMörschbächer, M.
dc.contributor.authorLenk, St.
dc.contributor.authorMantl, S.
dc.contributor.authorHerzog, H.J.
dc.contributor.authorHackbarth, Th.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorFichtner, P.F.P.
dc.date.accessioned2021-10-15T13:51:57Z
dc.date.available2021-10-15T13:51:57Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9041
dc.sourceIIOimport
dc.titleStrain relaxation of pseudomorphic Si1-xGe/Si(100) heterostructures after Si+ ion implantation
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage1745
dc.source.endpage1747
dc.source.journalJournal of Applied Physics
dc.source.issue3
dc.source.volume96
imec.availabilityPublished - imec
imec.internalnotes


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