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Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors

dc.contributor.authorHoussa, Michel
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorAutran, J.L.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T13:56:20Z
dc.date.available2021-10-15T13:56:20Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9062
dc.sourceIIOimport
dc.titleRole of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage2101
dc.source.endpage2103
dc.source.journalApplied Physics Letters
dc.source.issue11
dc.source.volume85
imec.availabilityPublished - imec


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