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The influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacks

dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorConard, Thierry
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T13:59:41Z
dc.date.available2021-10-15T13:59:41Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9078
dc.sourceIIOimport
dc.titleThe influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacks
dc.typeJournal article
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.beginpage552
dc.source.endpage555
dc.source.journalApplied Surface Science
dc.source.volume231-232
imec.availabilityPublished - imec
imec.internalnotes14th Int. Conf. Secondary Ion Mass Spectrometry and Related Topics; San Diego, CA


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