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Low-temperature anneal of the divacancy in p-type silicon: a transformation from V2 to VxOy complexes

dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMaes, Herman
dc.contributor.authorVan Bavel, Mieke
dc.contributor.authorLangouche, G.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-09-29T13:17:58Z
dc.date.available2021-09-29T13:17:58Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/916
dc.sourceIIOimport
dc.titleLow-temperature anneal of the divacancy in p-type silicon: a transformation from V2 to VxOy complexes
dc.typeJournal article
dc.contributor.imecauthorVan Bavel, Mieke
dc.source.peerreviewno
dc.source.beginpage3057
dc.source.endpage8
dc.source.journalApplied Physics Letters
dc.source.issue22
dc.source.volume66
imec.availabilityPublished - imec


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