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Excess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-bias

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.contributor.authorSmolanka, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T14:34:47Z
dc.date.available2021-10-15T14:34:47Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9229
dc.sourceIIOimport
dc.titleExcess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-bias
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage433
dc.source.endpage435
dc.source.journalIEEE Electron Device Letters
dc.source.issue6
dc.source.volume25
imec.availabilityPublished - imec


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