dc.contributor.author | Moens, Peter | |
dc.contributor.author | Van den Bosch, Geert | |
dc.contributor.author | De Keukeleire, Catherine | |
dc.contributor.author | Degraeve, Robin | |
dc.contributor.author | Tack, Marnix | |
dc.contributor.author | Groeseneken, Guido | |
dc.date.accessioned | 2021-10-15T14:56:03Z | |
dc.date.available | 2021-10-15T14:56:03Z | |
dc.date.issued | 2004-10 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/9311 | |
dc.source | IIOimport | |
dc.title | Hot hole degradation effects in lateral nDMOS transistors | |
dc.type | Journal article | |
dc.contributor.imecauthor | Moens, Peter | |
dc.contributor.imecauthor | Van den Bosch, Geert | |
dc.contributor.imecauthor | Degraeve, Robin | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.orcidimec | Van den Bosch, Geert::0000-0001-9971-6954 | |
dc.source.peerreview | no | |
dc.source.beginpage | 1704 | |
dc.source.endpage | 1710 | |
dc.source.journal | IEEE Trans. Electron Devices | |
dc.source.issue | 51 | |
dc.source.volume | 2004 | |
imec.availability | Published - imec | |