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Investigations by capacitance methods of n-Si irradiated by electrons at 450°C

dc.contributor.authorNeimash, V.B.
dc.contributor.authorKras'Ko, M.M.
dc.contributor.authorKraitchinski, A.M.
dc.contributor.authorKolosyuk, A.G.
dc.contributor.authorVoytovych, V.V.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRafi, J.M.
dc.contributor.authorClaeys, Cor
dc.contributor.authorVersluys, J.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-15T15:04:31Z
dc.date.available2021-10-15T15:04:31Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9343
dc.sourceIIOimport
dc.titleInvestigations by capacitance methods of n-Si irradiated by electrons at 450°C
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage779
dc.source.endpage784
dc.source.journalUkrainian Journal of Physics
dc.source.issue8
dc.source.volume49
imec.availabilityPublished - imec


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