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Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

dc.contributor.authorPawlak, Bartek
dc.contributor.authorSurdeanu, Radu
dc.contributor.authorColombeau, B.
dc.contributor.authorSmith, A.J.
dc.contributor.authorCowern, N.E.B.
dc.contributor.authorLindsay, Richard
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBrijs, Bert
dc.contributor.authorRichard, Olivier
dc.contributor.authorCristiano, F.
dc.date.accessioned2021-10-15T15:22:48Z
dc.date.available2021-10-15T15:22:48Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9411
dc.sourceIIOimport
dc.titleEvidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions
dc.typeJournal article
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorRichard, Olivier
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage2055
dc.source.endpage2057
dc.source.journalApplied Physics Letters
dc.source.issue12
dc.source.volume84
imec.availabilityPublished - imec


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