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Spatially indirect transitions due to coupling between a hole accumulation layer and a quantum well in resonant-tunneling diodes

dc.contributor.authorVan Hoof, Chris
dc.contributor.authorGenoe, Jan
dc.contributor.authorPortal, J. C.
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-09-29T13:19:38Z
dc.date.available2021-09-29T13:19:38Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/944
dc.sourceIIOimport
dc.titleSpatially indirect transitions due to coupling between a hole accumulation layer and a quantum well in resonant-tunneling diodes
dc.typeJournal article
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.source.peerreviewno
dc.source.beginpage14745
dc.source.endpage8
dc.source.journalPhys. Rev. B
dc.source.issue20
dc.source.volume51
imec.availabilityPublished - imec


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