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Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors

dc.contributor.authorRafi, Joan Marc
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T15:43:40Z
dc.date.available2021-10-15T15:43:40Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9489
dc.sourceIIOimport
dc.titleImpact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage7984
dc.source.endpage7992
dc.source.journalJapanese J. of Appl. Phys. Part 1
dc.source.issue12
dc.source.volume43
imec.availabilityPublished - imec


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