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On the reduction of carrier spilling effects during resistance measurements with the spreading impedance probe

dc.contributor.authorCzech, Ingrid
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-09-29T12:40:19Z
dc.date.available2021-09-29T12:40:19Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/94
dc.sourceIIOimport
dc.titleOn the reduction of carrier spilling effects during resistance measurements with the spreading impedance probe
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage298
dc.source.endpage303
dc.source.journalJ. Vac. Sci. Technol. B
dc.source.issue1
dc.source.volume12
imec.availabilityPublished - imec
imec.internalnotesPaper from the 2nd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors. Research Triangle Park, USA. March 23-25, 1993.


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