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TSUPREM4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorXu, Mingwei
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-15T16:14:37Z
dc.date.available2021-10-15T16:14:37Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9597
dc.sourceIIOimport
dc.titleTSUPREM4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions
dc.typeJournal article
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.journalMaterials Science for Semiconductor Processing
imec.availabilityPublished - imec
imec.internalnotesIn Press. Corrected proof available online 19 October 2004


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