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Correlation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.contributor.authorYoung, E.
dc.date.accessioned2021-10-15T16:16:23Z
dc.date.available2021-10-15T16:16:23Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9603
dc.sourceIIOimport
dc.titleCorrelation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage1057
dc.source.endpage1059
dc.source.journalApplied Physics Letters
dc.source.issue6
dc.source.volume85
imec.availabilityPublished - imec


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