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High-energy proton irradiation induced changes in the linear-kink noise overschoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N.B.
dc.contributor.authorSmolanka, A.M.
dc.contributor.authorGarbar, N.
dc.date.accessioned2021-10-15T16:17:54Z
dc.date.available2021-10-15T16:17:54Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9608
dc.sourceIIOimport
dc.titleHigh-energy proton irradiation induced changes in the linear-kink noise overschoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage4084
dc.source.endpage4092
dc.source.journalJournal of Applied Physics
dc.source.issue8
dc.source.volume95
imec.availabilityPublished - imec


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