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Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation

dc.contributor.authorSimoen, Eddy
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T16:18:12Z
dc.date.available2021-10-15T16:18:12Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9609
dc.sourceIIOimport
dc.titleTotal ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage1045
dc.source.endpage1054
dc.source.journalSolid-State Electronics
dc.source.volume48
imec.availabilityPublished - imec


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