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Advanced PMOS device architecture for highly-doped ultra-shallow junctions

dc.contributor.authorSurdeanu, Radu
dc.contributor.authorPawlak, Bartek
dc.contributor.authorLindsay, Richard
dc.contributor.authorVan Dal, Mark
dc.contributor.authorDoornbos, Gerben
dc.contributor.authorDachs, C.J.J.
dc.contributor.authorPonomarev, Youri
dc.contributor.authorLoo, Josine
dc.contributor.authorCubaynes, Florence
dc.contributor.authorHenson, Kirklen
dc.contributor.authorVerheijen, M.A.
dc.contributor.authorKaiser, M.
dc.contributor.authorPagès, Xavier
dc.contributor.authorStolk, Peter
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-15T16:31:56Z
dc.date.available2021-10-15T16:31:56Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9655
dc.sourceIIOimport
dc.titleAdvanced PMOS device architecture for highly-doped ultra-shallow junctions
dc.typeJournal article
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorDoornbos, Gerben
dc.contributor.imecauthorJurczak, Gosia
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1778
dc.source.endpage1783
dc.source.journalJapanese J. of Appl. Phys. Part 1
dc.source.issue4B
dc.source.volume43
imec.availabilityPublished - imec


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