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Correlation between barrier integrity and TDDB performance of copper porous low-k interconnects

dc.contributor.authorTokei, Zsolt
dc.contributor.authorPatz, Matthias
dc.contributor.authorSchmidt, Michael
dc.contributor.authorIacopi, Francesca
dc.contributor.authorDemuynck, Steven
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-15T16:41:10Z
dc.date.available2021-10-15T16:41:10Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9685
dc.sourceIIOimport
dc.titleCorrelation between barrier integrity and TDDB performance of copper porous low-k interconnects
dc.typeJournal article
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage70
dc.source.endpage75
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume76
imec.availabilityPublished - imec
imec.internalnotesMaterials for Advanced Metallization (MAM); March 2004; Brussels


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