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Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorRomano, Albert
dc.contributor.authorFedina, L.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorAseev, A.
dc.date.accessioned2021-09-29T13:22:20Z
dc.date.available2021-09-29T13:22:20Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/975
dc.sourceIIOimport
dc.titlePoint defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1194
dc.source.endpage1202
dc.source.journalMaterials Science and Technology
dc.source.issue11
dc.source.volume11
imec.availabilityPublished - open access
imec.internalnotesPaper from the 1st International Conference on Materials for Microelectronics. October 17-19, 1994. Barcelona, Spain.


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