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On the reliability of SIMS depth profiles through HfO2-stacks

dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBennett, J.
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorConard, Thierry
dc.contributor.authorGondran, C.
dc.contributor.authorDe Witte, Hilde
dc.date.accessioned2021-10-15T17:23:37Z
dc.date.available2021-10-15T17:23:37Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9821
dc.sourceIIOimport
dc.titleOn the reliability of SIMS depth profiles through HfO2-stacks
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorConard, Thierry
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.beginpage569
dc.source.endpage573
dc.source.journalApplied Surface Science
dc.source.volume231-232
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th Int. Conf. on Secondary Ion Mass Spectrometry and Related Topics; San Diego; Sept. 2003


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