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Charge trapping in metal-ferroelectric-insulator-semiconductor structure with SrBi2Ta2O9/Al2O3/SiO2 stack

dc.contributor.authorXu, Zhen
dc.contributor.authorKaczer, Ben
dc.contributor.authorJohnson, Jo
dc.contributor.authorWouters, Dirk
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T18:04:56Z
dc.date.available2021-10-15T18:04:56Z
dc.date.issued2004-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9947
dc.sourceIIOimport
dc.titleCharge trapping in metal-ferroelectric-insulator-semiconductor structure with SrBi2Ta2O9/Al2O3/SiO2 stack
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage1614
dc.source.endpage1619
dc.source.journalJournal of Applied Physics
dc.source.issue3
dc.source.volume96
imec.availabilityPublished - imec


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