Browsing by Author "Aderhold, J."

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AlGaN/GaN based MOSHFETs with different gate dielectrics and treatments

Mistele, D.
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Rotter, T.
;
Bougrioua, Z.
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Moerman, Ingrid
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Röver, K.S.
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Seyboth, M.
;
Schwegler, V.
Proceedings paper
2002, GaN and Related Alloys 2001, 26/11/2002, p.I6.51
AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments

Mistele, D.
;
Rotter, T.
;
Röver, K. S.
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Paprotta, S.
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Bougrioua, Zahia
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Fedler, F.
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Klausing, H.
Oral presentation
2001, MRS Fall Meeting 2001: Symposium I: GaN and related alloys; November 26-30, 2001; Boston, MA, USA.
Heterostructure field effect transistor types with novel gate dielectrics

Mistele, D.
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Rotter, T.
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Bougrioua, Zahia
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Röver, K. S.
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Fedler, F.
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Klausing, H.
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Stemmer, J.
Journal article
2001, Physica Status Solidi A, (188) 1, p.255-258
Influence of surface treatments on DC-performance of GaN-based HFETs

Mistele, D.
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Rotter, T.
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Bougrioua, Z.
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Marso, M.
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Roll, H.
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Klausing, H.
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Fedler, F.
Meeting abstract
2002, International Workshop on Nitride Semiconductors, 22/07/2002, p.119