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Browsing by Author "Adriaenssens, G. J."

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    Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si

    Houssa, Michel  
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    Stesmans, Andre  
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    Adriaenssens, G. J.
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    Heyns, Marc  
    Journal article
    2002, Journal of Non-Crystalline Solids, (303) 1, p.69-77
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    Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements

    Afanas'ev, V. V.
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    Houssa, Michel  
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    Stesmans, Andre  
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    Adriaenssens, G. J.
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    Heyns, Marc  
    Journal article
    2001, Microelectronic Engineering, (59) 1_4, p.335-340
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    Explanation of the non-saturating behavior of the hysteresis loop based on the relaxation current

    Bartic, Andrei
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    Wouters, Dirk
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    Adriaenssens, G. J.
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    Maes, Herman
    Journal article
    1999, Integrated Ferroelectrics, (26) 1_4, p.1025-1032
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    Silicon solar cells prepared by PIII-RTP technique

    Pinter, Istvan
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    Abdulhadi, A. H.
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    Dücsö, C.
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    Bársony, I.
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    Poortmans, Jef  
    Proceedings paper
    2000, 16th European Photovoltaic Solar Energy Conference. Proceedings, 1/05/2000, p.1743-1746
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    Space-charge-limited currents in materials with Gaussian energy

    Arkhipov, Vladimir
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    Heremans, Paul  
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    Emelianova, E. V.
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    Adriaenssens, G. J.
    Journal article
    2001, Applied Physics Letters, (79) 25, p.4154-4156
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    Suppression of rare-earth implantation-induced damage in GaN

    Vantomme, Andre  
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    Hogg, S. M.
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    Wu, Ming Fang
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    Pipeleers, B.
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    Swart, M.
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    Goodman, S.
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    Auret, D.
    Journal article
    2001, Nuclear Instruments & Methods in Physics Research Section B, 175-177, p.148-153
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    The effect of deep traps on carrier hopping in disordered organic materials

    Arkhipov, Vladimir
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    Heremans, Paul  
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    Emelianova, E. V.
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    Adriaenssens, G. J.
    ;
    Bässler, H.
    Oral presentation
    2002, E-MRS Spring Meeting Symposium F: Organic Materials for Device Applications

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