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Browsing by Author "Afanas'ev, Valery"

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    Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions

    Nguyen Hoang, Thoan
    ;
    Jivanescu, Mihaela
    ;
    O'Sullivan, Barry  
    ;
    Pantisano, Luigi
    ;
    Gordon, Ivan  
    Journal article
    2012, Applied Physics Letters, (100) 14, p.142101
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    Electronic properties of hydrogenated silicene and germanene

    Houssa, Michel  
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    Scalise, Emilio
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    Sankaran, Kiroubanand  
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    Pourtois, Geoffrey  
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    Afanas'ev, Valery
    Journal article
    2011, Applied Physics Letters, (98) 22, p.223107
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    Electronic properties of silicene: insights from first-principles modelling

    Houssa, Michel  
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    Pourtois, Geoffrey  
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    Heyns, Marc  
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    Afanas'ev, Valery
    ;
    Stesmans, Andre  
    Journal article
    2011, Journal of the Electrochemical Society, (158) 2, p.H107-H110
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    Electronic properties of two-dimensional hexagonal germanium

    Houssa, Michel  
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    Pourtois, Geoffrey  
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    Afanas'ev, Valery
    ;
    Stesmans, Andre  
    Journal article
    2010, Applied Physics Letters, (98) 8, p.82111
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    Experimental and theoretical investigation of defects at (100) Si(1-x)Ge(x)/oxide interfaces

    Houssa, Michel  
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    Pourtois, Geoffrey  
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    Meuris, Marc  
    ;
    Heyns, Marc  
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    Afanas'ev, Valery
    ;
    Stesmans, Andre  
    Journal article
    2011, Microelectronic Engineering, (88) 4, p.383-387
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    First-principles study of Ge dangling bonds in GeO2 and correlation with spin resinance at Ge/GeO2 interfaces

    Houssa, Michel  
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    Pourtois, Geoffrey  
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    Afanas'ev, Valery
    ;
    Stesmans, Andre  
    Journal article
    2011, Applied Physics Letters, (99) 21, p.212103
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    Functional silicene and stanene nanoribbons compared tographene: electronic structure and transport

    van den Broek, Bas
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    Houssa, Michel  
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    Iordadidou, K.
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    Pourtois, Geoffrey  
    ;
    Afanas'ev, Valery
    Journal article
    2016, 2D Materials, (3) 1, p.15001
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    Impact of point defects on the electronic and transport properties of silicene nanoribbons

    Iordanidou, Konstantina
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    Houssa, Michel  
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    van den Broek, Bas
    ;
    Pourtois, Geoffrey  
    Journal article
    2016, Journal of Physics: Condensed Matter, (28) 3, p.35302
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    Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling

    Scalise, Emilio
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    Houssa, Michel  
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    Pourtois, Geoffrey  
    ;
    Afanas'ev, Valery
    ;
    Stesmans, Andre  
    Journal article
    2011, Applied Physics Letters, (99) 13, p.132101
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    Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport

    van den Broek, Bas
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    Houssa, Michel  
    ;
    Lu, Augustin
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    Pourtois, Geoffrey  
    ;
    Afanas'ev, Valery
    Journal article
    2016-08, Nano Research, (9) 3, p.1-13
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    Structural and vibrational properties of amorphous GeO2 from first-principles

    Scalise, Emilio
    ;
    Houssa, Michel  
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    Pourtois, Geoffrey  
    ;
    Afanas'ev, Valery
    ;
    Stesmans, Andre  
    Journal article
    2011, Applied Physics Letters, (98) 20, p.202110
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    Theoretical aspects of graphene-like group IV semiconductors

    Houssa, Michel  
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    Van den Broek, Bas
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    Scalise, Emilio
    ;
    Ealet, Benedicte
    ;
    Pourtois, Geoffrey  
    Journal article
    2014, Applied Surface Science, 291, p.98-103
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    Topological to trivial insulating phase transition in stanene

    Houssa, Michel  
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    van den Broek, Bas
    ;
    Iordanidou, Konstantina
    ;
    Lu, Augustin
    ;
    Pourtois, Geoffrey  
    Journal article
    2016, Nano Research, (9) 3, p.774-778
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    Universal stress-defect correlation at (100)semiconductor/oxide interfaces

    Houssa, Michel  
    ;
    Scarrozza, Marco
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    Pourtois, Geoffrey  
    ;
    Afanas'ev, Valery
    ;
    Stesmans, Andre  
    Journal article
    2011, Applied Physics Letters, (98) 14, p.141901

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