Browsing by Author "Afanas'ev, Valery"
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Publication Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
Journal article2012, Applied Physics Letters, (100) 14, p.142101Publication Electronic properties of hydrogenated silicene and germanene
Journal article2011, Applied Physics Letters, (98) 22, p.223107Publication Electronic properties of silicene: insights from first-principles modelling
Journal article2011, Journal of the Electrochemical Society, (158) 2, p.H107-H110Publication Electronic properties of two-dimensional hexagonal germanium
Journal article2010, Applied Physics Letters, (98) 8, p.82111Publication Experimental and theoretical investigation of defects at (100) Si(1-x)Ge(x)/oxide interfaces
; ; ; ; ;Afanas'ev, ValeryJournal article2011, Microelectronic Engineering, (88) 4, p.383-387Publication First-principles study of Ge dangling bonds in GeO2 and correlation with spin resinance at Ge/GeO2 interfaces
Journal article2011, Applied Physics Letters, (99) 21, p.212103Publication Functional silicene and stanene nanoribbons compared tographene: electronic structure and transport
Journal article2016, 2D Materials, (3) 1, p.15001Publication Impact of point defects on the electronic and transport properties of silicene nanoribbons
Journal article2016, Journal of Physics: Condensed Matter, (28) 3, p.35302Publication Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling
Journal article2011, Applied Physics Letters, (99) 13, p.132101Publication Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport
Journal article2016-08, Nano Research, (9) 3, p.1-13Publication Structural and vibrational properties of amorphous GeO2 from first-principles
Journal article2011, Applied Physics Letters, (98) 20, p.202110Publication Theoretical aspects of graphene-like group IV semiconductors
Journal article2014, Applied Surface Science, 291, p.98-103Publication Topological to trivial insulating phase transition in stanene
Journal article2016, Nano Research, (9) 3, p.774-778Publication Universal stress-defect correlation at (100)semiconductor/oxide interfaces
Journal article2011, Applied Physics Letters, (98) 14, p.141901