Browsing by Author "Behet, Markus"
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Publication Cobalt contact on indium arsenide
Journal article1999, Journal of Magnetism and Magnetic Materials, 199, p.134-136Publication Comparative study on the performance of InAs/Al0.2Ga0.8Sb quantum well Hall sensors on germanium and GaAs substrates
Journal article2000, Sensors and Actuators A, (79) 3, p.175-175Publication Comparison of metamorphic InGaAs/InAlAs HEMT's on GaAs with InP based LM HEMT's
Proceedings paper1999, Proceedings of the 1999 International Conference on Gallium Arsenide Manufacturing Technology - MANTECH; 19-20 August 1999; Vanc, p.201-204Publication Effect of mixing enthalpy on relaxed and strained growth of III-Vy IV1-y II compound alloys using molecular-beam epitaxy
Journal article2000, Journal of Applied Physics, (87) 1, p.564-571Publication Electrical and structural properties of cobalt contacts on indiumarsenide
Meeting abstract1998, Abstracts 3rd International Symposium on Metallic Multilayers - MML, 14/06/1998, p.73Publication Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator
Journal article1998, Applied Physics Letters, (73) 1, p.88-90Publication High-performance InAs quantum well based Corbino magnetoresistive sensors on germanium substrates
Journal article1999, Japanese Journal of Applied Physics. Part 1, (38) 3A, p.1310-1313Publication High-performance InAs quantum well Hall sensors on germanium substrates
Journal article1998, Electronics Letters, (34) 23, p.2273-2274Publication InAs quantum well magnetic sensors with high sensitivity and excellent temperature stability
Proceedings paper1998, Conference Proceedings 2nd International Conference on Advanced Semiconductor Devices and Microsystems - ASDAM, 5/10/1998, p.323-326Publication InAs/(Al,Ga)Sb quantum well structures for magnetic sensors
Journal article1998, IEEE Trans. Magnetics, (34) 4, p.1300-1302Publication InAs/Al0.2Ga0.8Sb quantum Hall effect sensors
Journal article2000, Sensors and Actuators A, (81) 1_3, p.13-17Publication InAs/Al0.2Ga0.8Sb quantum well Hall sensors with improved temperature stability
; ;Moshchalkov, V. V. ;Bruynseraede, Y. ;Behet, Markus; Journal article1999, Review of Scientific Instruments, (70) 6, p.2715-2718Publication Induced magnetoresistance in semiconducting devices due to single sub-micron magnetic barriers and random magnetic fields
;Kubrak, V. ;Rushforth, A. W. ;Rahman, F. ;Gallagher, B. L. ;Main, P. C. ;De Bock, J.Behet, MarkusOral presentation1999, MRS Spring Meeting Symposium K : Hybrid Magnetic, Semiconductor, and Superconductor Structures; 5-9 April 1999; San Francisco, CPublication InP-based heterostructures for low-noise and power applications
Oral presentation1997, 7th European Workshop on Heterostructure Technology (HETECH'97); 14-16 September 1997; Jülich, Germany.Publication Magnetotransport in large-diameter InAs/GaSb antidot lattices
;Eroms, J. ;Zitzlsperger, M. ;Weiss, D. ;Smet, J. H. ;Albrecht, C. ;Fleischmann, R.Behet, MarkusJournal article1998, Physica B, B256-258, p.409-412Publication MBE growth and characterization of strained InAlAs/inAs/InAsSb/InAs superlattices for mid-IR type II lasers
; ; ;Behet, Markus; ; ;Fuchs, F.Wagner, J.Oral presentation1998, Workshop Middle Infrared (2-15 mm) Coherent Sources, MICS '98; 22-26 Sept. 1998; Cargese, France.Publication Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications
Journal article1998, Applied Physics Letters, (73) 19, p.2760-2762Publication Molecular beam epitaxial growth of InAs/(Al,Ga)Sb quantum-well structures on germanium substrates
Journal article1999, Appl. Phys. Lett., (74) 22, p.3371-3373Publication Molecular beam epitaxy and characterization of InAs/(Al, Ga)Sb quantum wells for device application
Meeting abstract1997, PHASDOM 97 : Phantoms Strategic Domain meetings, Physics and Technology of Mesoscopic Systems. Abstracts, 10/03/1997, p.D1.15cPublication Molecular beam epitaxy and characterization of InAs/Al0.2Ga0.8Sb heterostructures for magnetic sensing applications
;Behet, Markus; ; ; ;Tümmler, J. ;Woitok, J.Geurts, J.Journal article1998, Semiconductor Science and Technology, (13) 4, p.428-432