imec Institutional Repository Browsing {{ collection }} by Author "Bougrioua, Z."

Publication

AlGaN/GaN based MOSHFETs with different gate dielectrics and treatments

Mistele, D.

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Rotter, T.

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Bougrioua, Z.

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Moerman, Ingrid

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Röver, K.S.

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Seyboth, M.

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Schwegler, V.

Proceedings paper

2002, GaN and Related Alloys 2001, 26/11/2002, p.I6.51

Publication

AlGaN/GaN HEMTS: material, processing and characterization

Calle, F.

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Palacios, T.

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Monroy, E.

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Grajal, J.

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Verdu, M.

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Bougrioua, Z.

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Moerman, Ingrid

Journal article

2003, Journal of Materials Science: Materials in Electronics, (14) 5_7, p.271-277

Publication

Characterisation of GaN buffers with AIN interlayers used as semi-insulating templates for HEMT strutures

Bougrioua, Z.

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Leroux, M.

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Moerman, Ingrid

Meeting abstract

2002, International Workshop on Nitride Semiconductors, 22/07/2002, p.382

Publication

Detailed interpretation of electron transport in n-GaN

Mavroidis, C.

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Harris, J.J.

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Kappers, M.J.

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Humphreys, C.J.

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Bougrioua, Z.

Journal article

2003, Journal of Applied Physics, (93) 11, p.9095-9103

Publication

Engineering of an insulating buffer and use of AIN interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Bougrioua, Z.

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Moerman, Ingrid

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Nistor, L.

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Van Daele, B.

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Monroy, E.

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Palacios, T.

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Calle, F.

Journal article

2003, Physica Status Solidi A, (195) 1, p.93-100

Publication

Engineering of an insulating buffer and use of AIN interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Bougrioua, Z.

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Moerman, Ingrid

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Nistor, L.

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Monroy, E.

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Calle, F.

Meeting abstract

2002, EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 26/05/2002

Publication

Evidence of an impurity band at an n-GaN/sapphire interface

Mavroidis, C.

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Harris, J.J.

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Jackman, R.B.

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Bougrioua, Z.

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Moerman, Ingrid

Journal article

2003, Diamond and Related Materials, (12) 3_7, p.1127-1132

Publication

Evolution de caractéristiques statiques de HEMTs AlGaN/GaN soumis à un stress électrique réalisé à differentes températures

Boudart, B.

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Llibre, J.F.

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Briand, D.

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Tala-Ighil, B.

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Toutah, H.

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Guhel, Y.

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de Jaeger, J.C.

Oral presentation

2003, Journées Nationales Micro-Ondes - JNM

Publication

Fabrication and performance of AlGaN/GaN HEMTS

Calle, F.

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Palacios, T.

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Monroy, E.

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Grajal, J.

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Tirado, J.M.

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Jiménez, A.

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Ranchal, R.

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Munoz, E.

Proceedings paper

2002, Proceedings 4th International Conference on Materials for Microelectronics and Nanoengineering, 10/06/2002, p.25-28

Publication

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Werquin, M.

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Vellas, N.

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Guhel, Y.

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Ducatteau, D.

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Boudart, B.

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Pesant, J.C.

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Bougrioua, Z.

Journal article

2005, Microwave and Optical Technology Letters, (46) 4, p.311-315

Publication

Free carrier mobility in AlGaN/GaN quantum wells

Farvacque, J.L.

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Bougrioua, Z.

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Carosella, F.

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Moerman, Ingrid

Journal article

2002, Journal of Physics - Condensed Matter, (14) 48, p.13319-13328

Publication

High power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHz

Vellas, N.

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Gaquire, C.

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Guhel, Y.

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Werquin, M.

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Ducatteau, D.

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Boudart, B.

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de Jaeger, J.C.

Proceedings paper

2002, Proceedings of the IEEE GaAs 2002 Conference, 23/09/2002, p.25-28

Publication

Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Guhel, Y.

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Boudart, B.

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Vellas, N.

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Gaquiere, C.

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Delos, E.

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Ducatteau, D.

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Bougrioua, Z.

Journal article

2005, Solid-State Electronics, (19) 10, p.1589-1594

Publication

Improved AlGaN/GaN high mobility transistor using AIN interlayers

Jiménez, A.

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Bougrioua, Z.

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Tirado, J.M.

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Braña de Cal, Alejandro F.

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Calleja, E.

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Muñoz, E.

Journal article

2003, Applied Physics Letters, (82) 26, p.4827-4829

Publication

Improved HEMT devices from AlGaN/GaN heterojunctions using AIN interlayers

Jiménez, A.

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Tirado, J.M.

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Bougrioua, Z.

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Braña de Cal, Alejandro F.

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Grajal, J.

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Cubilla, P.

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Muñoz, E.

Meeting abstract

2003, Abstracts Book WOCSDICE - 27th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, 26/05/2003

Publication

Influence d'une passivation précédée d'un traitement de surface sur le comportement électrique en regime statique d'un HEMT AlGaN/GaN

Guhel, Y.

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Boudart, B.

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Vellas, N.

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Gaquiere, C.

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Delos, E.

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Ducateau, D.

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Bougrioua, Z.

Oral presentation

2003, Journées Nationales Micro-Ondes - JNM

Publication

Influence of process technology on DC-performance of GaN-based HFETs

Mistele, D.

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Rotter, T.

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Bougrioua, Z.

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Marso, M.

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Roll, H.

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Klausing, H.

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Fedler, F.

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Semchinova, O.

Journal article

2002, Physica Status Solidi A, (194) 2, p.452-455

Publication

Influence of surface treatments on DC-performance of GaN-based HFETs

Mistele, D.

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Rotter, T.

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Bougrioua, Z.

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Marso, M.

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Roll, H.

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Klausing, H.

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Fedler, F.

Meeting abstract

2002, International Workshop on Nitride Semiconductors, 22/07/2002, p.119

Publication

Influence of the nucleation layer growth pressure on GaN growth by MOCVD

Ramloll, C.S.

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Bougrioua, Z.

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Barnard, J.S.

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Humphreys, C.J.

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Moerman, Ingrid

Proceedings paper

2002, Proceedings ICEM15, the 15th International Congress on Electron Microscopy, 1/09/2002, p.75-76

Publication

Premiers résultats de puissance à 4GHz obtenus sur HEMTs AlGaN/GaN en technologie planar

Vellas, N.

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Guhel, Y.

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Gaquiere, C.

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Boudart, B.

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Pesant, J.C.

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Bougrioua, Z.

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Germain, Marianne

Oral presentation

2003, Journées Nationales Micro-Ondes

Browsing by Author "Bougrioua, Z."