Browsing by Author "Crawley, J. A."
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Publication Getter stabilized zeolite materials for specialty GAS purification
;Vergani, G. ;Succi, M. ;Thrush, E. J. ;Crawley, J. A. ;Van der Stricht, Wim ;Torres, P.Kroll, U.Proceedings paper1997, Proceedings of the 43rd Annual Technical Meeting; 4-8 May 1997. Los Angeles, Calif., USA., p.262-272Publication Growth and characterisation of GaN and InGaN by metalorganic chemical vapour deposition for blue light emitting devices
Proceedings paper1996, Proceedings 1996 IEEE/LEOS Symposium. Annual Symposium of the IEEE/LEOS Benelux Chapter, 28/11/1996, p.50-53Publication Growth and in situ monitoring of GaN using IR interference effects
Journal article1998, Journal of Crystal Growth, (195) 1_4, p.192-198Publication High indium content InGaN films and quantum wells
;Van der Stricht, Wim ;Jacobs, Koen; ; ;Considine, L.Thrush, E. J.Proceedings paper1998, Nitride Semiconductors, 1/12/1997, p.107-112Publication Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2'' wafer close-spaced vertical rotating disk reactor
;Vanhollebeke, Koen ;Considine, L.; ; ;Thrush, E. J.Crawley, J. A.Journal article1998, Journal of Crystal Growth, (195) 1_4, p.644-647Publication Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor
Journal article1997, Journal of Crystal Growth, 170, p.83-87Publication Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a novel 3x2'' vertical rotating disc MOVPE-reactor
Oral presentation1996, Proceedings of the 8th International Conference on Metal Organic Vapour Phase Epitaxy; 9-13 June 1996; Cardiff, Wales.Publication MOCVD-growth of gallium nitride
Proceedings paper1996, IEE Colloquium on Wide Bandgap Semiconductor Light Emitters; 16 October 1996; London, UK., p.2-1-OctPublication MOVPE growth and characterization of high quality InGaN films
Proceedings paper1997, Workshop Booklet. EW MOVPE VII. 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques; 8-11, p.F6Publication MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells
Proceedings paper1997, 1997 Digest of the IEEE/LEOS Summer Topical Meetings: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructur, p.27-28Publication MOVPE growth optimization of high quality InGaN films
;Van der Stricht, Wim; ; ;Considine, L. ;Trush, E. J.Crawley, J. A.Journal article1997, MRS Internet Journal of Nitride Semiconductor Research, 2, p.2-16Publication Study of GaN and InGaN films grown by metalorganic chemical vapour deposition
Journal article1997, Journal of Crystal Growth, (170) 1_4, p.344-348Publication Study of GaN films by metalorganic chemical vapour deposition
Journal article1996, MRS Internet Journal of Nitride Semiconductor Research, 1, p.1-3Publication Study of GaN films grown by metalorganic chemical vapour deposition
Oral presentation1996, First European GaN Workshop (EGW-1); 2-4 June 1996; "Rigi, Switzerland".Publication The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition
Proceedings paper1996, Gallium Nitride and Related Materials; 27 November - 1 December 1995; Boston, MA, USA., p.231-236