Browsing by Author "D'Hondt, Mark"

4-mW microcavity LED at 650 nm on germanium substrates

5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates

(Al)GaInP multiquantum well LEDs on GaAs and Ge

(Al)GaInP multiquantum well LEDs on Ge and GaAs

AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates

Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures

Characterisation of 2% mismatched InGaAs layers, grown on different bufferlayers and at different growth temperatures

Comparison of Different Buffer Layers for 1.9% Lattice-Mismatched InGaAs on InP for 2.5 mm Wavelength Photodetector Application

Dark current optimisation for MOVPE grown 2.5μm wavelength InGaAs photodetectors

Dark current optimisation of 2.5μm wavelength, 2% mismatched InGaAs photodetectors on InP

Dark current reduction for 2.5mm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature

Development of InAlGaP-materials on Ge-substrates for red light emitters, using a safe MOVPE-process

Germanium - The all-purpose substrate of the future

Germanium as a growth substrate for high quality AlGaAs/InGaAs laser diodes

High efficiency InAlGaP microcavity LEDs on Ge-substrates

High quality AlGaInP layers on GaAs and Ge grown by MOVPE

High quality InGaAs/AlGaAs lasers grown on Ge substrates

High-efficiency 650 nm thin-film light-emitting diodes

High-efficiency thin-film light-emitting diodes at 650nm

III-V semiconductor waveguiding devices using adiabatic tapers