Browsing by Author "Efremov, A."

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gamma-Irradiation hardness of short-channel NMOSFETS fabricated in a 0.5 μm SOI technology

Claeys, Cor
;
Simoen, Eddy
;
Efremov, A.
;
Litovchenko, V. G.
;
Evtukh, A.
;
Kizjak, A.
;
Rassamakin, J.
Journal article
2002, Nuclear Instruments & Methods in Physics Research B, (186) 1_4, p.429-434
Influence of gamma-radiation on short channel SOI-MOSFETs with thin SiO2 films

Claeys, Cor
;
Simoen, Eddy
;
Litovchenko, V.G.
;
Evtukh, A.
;
Efremov, A.
;
Kizjak, A.
;
Rassamakin, J.
Proceedings paper
2002, Progress in SOI Structures and Devices Operating at Extreme Conditions. Proceedings of the NATO Advanced Research Workshop, 15/10/2000, p.211-220
Study of the early stage kinetics of SOI formation in stimulated regimes

Litovchenko, V.
;
Romanyuk, B.
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Efremov, A.
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Melnik, V.
;
Claeys, C.
;
Vanhellemont, Jan
Oral presentation
1999, Symposium E of the European Materials Research Society 1999 Spring Meeting; June 1-4, 1999; Strasbourg, France.
γ-irradiation hardness of short channel NMOSFETs fabricated in a 0.5 µm SOI technology

Claeys, C.
;
Simoen, Eddy
;
Efremov, A.
;
Litovchenko, V. G.
;
Evtuth, A.
;
Kizjak, A.
;
Rassamakin, J.
Oral presentation
2001, Symposium B of the E-MRS Spring Meeting 2001: Defect Engineering of Advanced Semiconductor Devices;