Browsing by Author "Esseni, D."

Now showing 1 - 4 of 4

Design of ultra-wideband low-noise amplifiers in 45nm CMOS technology: comparison between planar bulk and SOI FinFET devices

Ponton, Davide
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Palestri, P.
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Esseni, D.
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Selmi, L.
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Tiebout, M.
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Parvais, Bertrand
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Siprak, D.
Journal article
2009, IEEE Transactions on Circuits and Systems I: Regular Papers, (56) 5, p.920-932
Design of UWB LNA in 45nm CMOS technology: Planar vs. FinFET

Ponton, Davide
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Palestri, P
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Esseni, D.
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Selmi, L.
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Tiebout, M.
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Parvais, Bertrand
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Knoblinger, G.
Proceedings paper
2008-05, IEEE International Symposium on Circuits and Systems, 18/05/2008, p.2701-2704
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

Serra, N.
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Conzatti, F.
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Esseni, D.
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De Michielis, M.
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Palestri, P.
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Selmi, L.
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Thomas, S.
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Whall, T. E.
Proceedings paper
2009, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.71-74
Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility

Driussi, F.
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Esseni, D.
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Selmi, L.
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Schmidt, M.
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Lemme, M.
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Kurz, H.
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Buca, D.
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Mantl, S.
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Luysberg, M.
Proceedings paper
2007, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007, p.315-318